Abstract
The saturated electron drift velocity has been measured in epitaxial 6H silicon carbide layers. The saturation occurs at an electric field of approximately 2×105 V/cm. The saturated drift velocity is 2×107 cm/s at room temperature, i.e., a factor of 2 higher than in silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have