Measurement of electrophysical properties of silicon carbide epitaxial films

Abstract

In the present work parameters and distribution of deep and shallow centers in 6H and 4H SiC epitaxial layers made by sublimation in an open system were investigated. In 6H SiC five deep centers were identified, and in 4H SiC two deep centers. The temperature dependence of the diffusion potential of p-n structures made from the epi-layers and their degree of compensation was investigated. The role in the processes of radiative recombination of the deep centers identified in the study is considered.