Abstract
An effective technique with recording UV beams (364nm) and red light (633nm) readout is proposed to realize nonvolatile holographic storage in Ce:Mn:LiNbO3 crystals, the recording results show that both of the recording sensitivity and the fixed diffraction efficiency can be improved more 50 times than that in two-center recording scheme with recording red beams (633nm) and UV sensitization. The theoretical analysis shows that some factors result in these improvements in this UV recording scheme, the first is that much electrons are excited simultaneity in the deep center and the average movement cycle becomes shorter; the second is that bulk photovoltaic coefficient of shallow center for recording wavelength is increased with recording wavelength being shorter, the last is that electrons grating in the deep and shallow center being in phase makes the fixed space-charge field stronger. This technique can be used to realize the high-density data storage.
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