Abstract
An experimental determination of the average projective ranges Rp of accelerated ions in silicon, based on the measurement of the specific resistivity profile in irradiated samples is described. The theoretical aspects of the method related to the determination of the radiation-induced defect concentration profile and values of Rp from the above measurements, are discussed. New experimental data in silicon on the ranges of ions of hydrogen, deuterium, and helium with energies between 0.1 and 6.3 MeV/nucleon and the ions of boron, nitrogen, and phosphorus with energies from 0.03 to 0.7 MeV/nucleon are presented. The results obtained are compared with the respective theoretical values and with the experimental data. [Russian Text Ignored.]
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