Measurement and simulation of IM distortion in high mobility transistors

Guoli Qu Guoli Qu,A.E Parker

doi:10.1109/icsict.2001.982149

Measurement and simulation of IM distortion in high mobility transistors

Guoli Qu Guoli Qu, A.E Parker

https://doi.org/10.1109/icsict.2001.982149

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Publication Date: Oct 22, 2001

Affiliation: Macquarie University

#High Mobility Transistors #Simulation Of Intermodulation Distortion + Show 8 more

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Abstract

This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.

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