Analytical Study of Electron Mobility in Hemts Algan/Gan

Nouacry A,Touhami A

doi:10.4172/2332-0796.1000169

Abstract

The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mobility Transistor) are based on the heterojunction AlGaN/GaN. Our work is the subject of an analytical study of the carrier mobility HEMTs AlGaN/GaN calculating Ionized impurities scattering, Residual impurities scattering, Interface roughness scattering, Alloy disorder scattering, dislocations scattering, Phonons and Dipoles taking into account the impact of technological parameters (doping, aluminium content) and geometric (thickness barrier, interface roughness). The results allowed us to take account of the variation of carrier density in the wells of 2D electronic gas.

Highlights

The power devices based on semiconductor play an important role in the regulation and distribution of energy in the world [1] and have become an essential component in telecommunications systems
Many mechanisms of diffusion may limit the mobility of electrons in the gas: Some are defined as elastic scattering centers and others are inelastic
The analytical study of the behavior of the mobility of the HEMT structure and its dependency on the density of 2D gas, allowed us to account for the variation of carrier density in the electronic wells of 2D gas

Summary

Introduction

The power devices based on semiconductor play an important role in the regulation and distribution of energy in the world [1] and have become an essential component in telecommunications systems. Many mechanisms of diffusion may limit the mobility of electrons in the gas: Some are defined as elastic scattering centers (donors, interface roughness, alloy disorder, dislocations loaded) and others are inelastic (acoustic and optical phonons).

Results

Conclusion