Abstract
A detailed theoretical study of quasi-bound electronic states in single AlGaAs/GaAs quantum wells is presented. The dependence of the full width at half maxima (FWHM) of the virtual states and their mean lifetime on the well width is revealed for quantum well widths from 10 to 500 monolayers (MLs). Series of strongly localized electronic states are found in the continuum spectra of wide quantum wells and the energy and spatial localizations of these states are investigated. The numerical calculations are performed within the frame-work of a semi-empirical sp3s* tight-binding model including spin. The Surface Green-Function Matching (SGFM) method is applied and a new numerical scheme is proposed to determine the energy position and the line shape of the quasi-bound states. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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