Abstract
We have studied the correlation between nitrogen composition ofbulk GaAsN layers grown by molecular beam epitaxy using rfplasma cell and photoluminescence (PL) intensity. We have carriedout careful optimization of the plasma cell aperture layout andplasma operation regimes as well as the growth condition of theGaAsN. We have demonstrated the same efficiency ofPL from GaAsN layers with up to 1.5% ofnitrogen as for GaAs analogues grown at the same temperature.The integrated PL intensity of the sample containing 2.5% drops only three times. Using post-growth annealing weeliminated defects related to low-temperature growth andthereby achieved the same radiative efficiency for GaAsNsamples grown at 520 °C as for the reference layer ofGaAs grown at 600 °C.
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