Abstract
MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates isstudied. Insight into the formation mechanism of this type of surface, theinterface, and the bulk has been provided by photoemission spectroscopy.Detailed lineshape analyses of Se, Mg, and Zn core levels have been performed,following their evolution as MgSe is deposited. Shifts for all core levels arevery small during the deposition, indicating band bending is virtuallynegligible under the present growth conditions. After deposition of 1.7 nm ofMgSe, emission from the substrate is fully attenuated. A value of 0.44 nm isobtained for the inelastic scattering mean free path for electrons with akinetic energy of around 65.8 eV in the MgSe thin films. Annealing the sampleat 500 °C for 30 min results in full desorption of the thick Se layerformed on the MgSe surface. The intensities of the MgSe core level emissionsobviously decrease. In contrast, the ZnSe peak reappears. Emission frommetallic Mg is also observed. Annealing at 500 °C for 30 min moreresults in the desorption of nearly all the MgSe layer, whereas the intensityof the bulk ZnSe emission remains almost unchanged.
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