Abstract
The majority of InN doping studies have primarily focused on Mg, as it has previously been used to successfully realize p-type GaN. Here, we consider an alternative dopant—Mn—as a possible acceptor candidate in InN. Magnetotransport, x ray photoelectron spectroscopy, and photoluminescence were used to investigate electrical and optical properties of a series of Mn-doped InN thin films grown using molecular beam epitaxy. Evidence of acceptor behavior was observed only for moderate (1017 cm−3) doping levels. At a doping level around 1017 cm−3, light hole features appear in the quantitative mobility spectrum analysis, the surface Fermi level shifts downwards towards the valence band, and low energy features appear in the low temperature photoluminescence spectra.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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