Characterization and Simulation of Semiconductor Thin Films Using Quantitative Mobility Spectrum Analysis (QMSA)

Abstract

A quantitative mobility spectrum analysis (QMSA) technique of characterizing mobility and concentration of individual carrier species for modern semiconductor hetero-structures by experimentally generated Hall and resistivity data as a function of magnetic field is presented. QMSA enables the conductivity contribution of bulk majority carriers to be separated from that of carriers present at the surface or at the spacer/barrier layer of GaAs-AlGaAs (2) based HEMTs for characterizing carriers developed in '2' DEG region. Beck and Anderson mobility spectrum analysis (MSA) technique was considered as the first trial function. A variation on the iterative procedure of Dziuba and Gorska is used to obtain the mobility spectrum which shows the quantitatively accurate mobility distribution. QMSA is advantageous because in comparison to its previous counter parts such as MCF, MSA and Dziuba & Gorska; it does not take any prior assumption about the number of electron and hole species as well as their approximate mobilities. A ghost hole along with surface and bulk electron was found in the '2' DEG region developed in HEMTs. In this article, we apply QMSA to both analytical data of Hg1-xCdxTe and real experimental data of AlGaAs obtained from the Hall measurement system. General Terms: QMSA algorithm, Spline Interpolation, Pinning Point, Jacobi's Iteration, Gauss Seidel Iteration Procedure.