Abstract
We demonstrate an optimized quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity data. The procedure is applied to an In1−xGaxAs–In1−xAlxAs single quantum well, GaAs–AlAs asymmetric double quantum wells, and Hg1−xCdxTe epitaxial thin films containing multiple carrier species. The results illustrate the reliability, versatility, and sensitivity of the analysis, which is fully computer automated following input of the magnetic-field-dependent data. QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor material and device transport properties.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
