Abstract
Two micron wavelength InGaAsSb/AlGaAsSb multi-quantum well laser structures have been grown by using solid source MBE, and ridge type diode laser chips with narrow ridge width have been fabricated. The performance of this MBE grown 2 μm wavelength lasers have been evaluated on chip level without chip mounting and wire bonding. The laser chips show a threshold current of about 75 and 123 mA at 0°C and 40°C, respectively, with a characteristic temperature T 0 of 79 K. Maximum output power was greater than 25 mW per uncoated facet below 40°C, with no observable kink. Maximum lasing temperature greater than 80°C has been achieved in quasi-CW driving conditions. Fairly good single mode lasing characteristics have been observed under pulsed driving condition in 0–60°C range, with a temperature tuning coefficient of 0.78 nm/°C.
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