Abstract
A design for midinfrared diode lasers based on interband type-II miniband-to-bound state transitions is proposed and has been demonstrated experimentally. Type-II miniband-to-bound state laser structures emitting at 3.25μm with active regions consisting of 5 and 10W periods were grown by solid-source molecular-beam epitaxy and processed into ridge waveguide lasers. Substrate-side down mounted devices with a 10 period active region and uncoated facets could be operated in continuous-wave (cw) mode up to 185K and as high as 260K in pulsed mode. A high characteristic temperature of 100K has been achieved for heat-sink temperatures below 140K, decreasing to 33K for the 140 to 185K interval. At 110K, a 5 period laser structure exhibited a threshold current density of 177A∕cm2 and a slope efficiency of 61mW∕A. Single-ended output powers of 144mW in cw mode and exceeding 330mW in pulsed operation were obtained for a substrate-side down mounted 5 period diode laser with high-reflection∕antireflection coated mirror facets, operated at 110K.
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