MBE as a production technology for AlGaAs lasers

Abstract

We are the first to succeed in the mass production of AlGaAs visible-wavelength semiconductor laser on a commercial basis using MBE. Single-transverse-mode self-aligned AlGaAs double heterostructure (DH) lasers were fabricated by a two-step molecular beam epitaxial technique. A GaAs layer was thermally etched selectively in the MBE system just prior to regrowth. There was no problem associated with the regrowth of an AlGaAs layer after the thin GaAs passivation layer was removed. This self-aligned structure by MBE affords high control of transverse and longitudinal modes, which results in high quality laser for various applications such as compact disc, video disc, laser beam printer and optical memory disc.