Abstract
Abstract The incorporation of copper (Cu) is one of the critical processes for fabricating high-efficiency CdTe thin-film solar cells. However, due to its high mobility in CdTe, the distribution and concentration of Cu must be carefully engineered to reduce the compensative donor-like interstitial defects in CdTe bulk and the recombination centers at the buffer layer/CdTe interface to maximize device performances. Here, a cuprous chloride (CuCl) solution treatment and a rapid thermal annealing (RTA) process are used to control the concentration and distribution of Cu in CdTe absorbers, enabling a champion CdTe thin-film solar cell with a power conversion efficiency of 17.5% without selenium incorporation. The results demonstrate that the use of a CuCl solution can substantially reduce the amount of Cu needed in CdTe and the RTA process is a viable approach to engineer the Cu distribution in CdTe solar cells.
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