Matteucci Effect and Single Domain Wall Propagation in Bistable Microwire under Applied Torsion

Abstract

Systematic experimental results on the Matteucci effect in torsioned magnetostrictive FeSiB microwire are introduced, observed during the propagation of a single domain wall (DW) under the action of axial driving magnetic field, Hdr. These data are discussed, reviewing current bibliography models and proposing new perspectives. The unidirectional DW velocity is quantified by voltage induced in tiny pickup coils along the microwire. The Matteucci electromotive force (emf) induced between the microwire's ends is associated with depinning and annihilation of the DW, introducing a new method to measure DW velocity. The emf amplitude is proportional to the DW velocity and the time derivative of the azimuthal magnetization, tailored by applied torsion. The data confirm the existence of net values of azimuthal magnetization and spontaneous torsion induced during fabrication. The clockwise/counterclockwise applied torsion dependence of Matteucci emf and DW velocity are experimentally determined for parallel and antiparallel Hdr. Asymmetric behaviors are observed for both, the sense of applied torsion and the direction of Hdr. The experimental data are discussed in terms of the magnetoelastic anisotropy introduced by torsion. Through analysis of the DW dynamics, such asymmetric behaviors are interpreted as a magnetochiral effect derived from the change of chirality of the propagating wall.