Abstract

In this work, theoretical calculations and simulated data are presented that enable us to calculate the effect of Ar: Hg on the plasma electronic coefficients depending on the variance in the plasma field resistance, which presents in a varied electrical field and under thermodynamic equilibrium. The electric field was chosen in the limited range (1-1000) Td, and the concentrations in the limited range (0.01-0.09) mol. Results show a good agreement between the original data (using BOLSIG +) and that estimated data. There are a large number of applications, for example, material technology that uses flare discharge, thin-film deposition, invasive laser beams, and plasma screen TV. Other technological applications such as gas circuit breakers and L. of particle detectors have also been developed. The work includes calculating the effect of c variation on plasma electronic coefficients and different mercury concentrations of the argon and mercury mixture, and secondly, calculating the effect of the electric field (E / N) on electronic coefficients (mobility, the mean energy of electron, momentum frequency) by solving the Boltzmann equation using BOLSIG + where It was noticed that there is a clear effect of reducing the electric field (E / N) on the electronic transactions where the low electric field increases.

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