Abstract
We propose the application of GaInNAs in laser diodes. This novel material is very attractive for overcoming the poor temperature characteristics of conventional InGaAsP-based long-wavelength LDs, because the electron overflow from the wells to the barrier layers at high temperatures can be suppressed because of the very deep quantum wells. GaInNAs is also promising for the fabrication of long-wavelength vertical-cavity surface emitting lasers (VCSELs), because a GaInNAs active layer can be grown pseudomorphically on a highly reflective GaAs-AlAs DBR mirror on a GaAs substrate in a single epitaxial growth. To improve the performance of GaInNAs long-wavelength lasers, we need to know the material properties of GaInNAs.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call