Abstract
We present, to the best of our knowledge, the first successful simulation of color-coded III-nitride light-emitting diodes (LEDs) incorporating in their active regions shallow and deep InGaN quantum wells (QWs). Dichromatic violet–aquamarine semipolar LEDs grown in Ga-polar and N-polar crystallographic orientations (Kawaguchi et al. in Appl Phys Lett 100:231110–231114, 2012) were used as an experimental benchmark. Opposite interface polarization charges in Ga-polar and N-polar LEDs provide different conditions for carrier transport and account for different shape of color-coded emission spectra. To reproduce experimentally observed trends, several effects specific for deep III-nitride QWs were essential in our modeling including \((1)\) strongly non-equilibrium character of active QW populations, \((2)\) dynamic carrier overshoot of narrow QW layers, and \((3)\) Auger-assisted QW depopulation.
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