Masking coating formation by the focused ion beams method for plasma chemical treatment

Abstract

The application of the focused ion beams method makes it possible to obtain modified surfaces serving as a masking layer for subsequent processing of semiconductor materials. The use of plasma chemical etching as a method for profiling modified surfaces makes it possible to obtain cleaner surfaces than for liquid etching. In this paper, experimental studies of a masking coating formation were carried out using a focused ion beams method on a scanning electron microscope, followed by a relief formation by the plasma chemical etching method. The effect of local surface treatment of silicon by the focused ion beams method on the etching rate of the treated regions by the method of plasma chemical etching was examined. Samples with the formed regions were obtained, which demonstrated masking and stimulating properties during plasma chemical etching. The structures height after plasma chemical etching varied from 10 to 266 nm.