The Formation of a Topological Drawing in a Polycrystalline Diamond Layer by the Plasma-Chemical Etching Method

Abstract

The article is devoted to the actual problem of the synthesis of polycrystalline diamonds with a combination of unique electrophysical parameters (high hardness and thermal conductivity, low dielectric constant, high radiation resistance, etc.), due to which diamonds are promising materials for micromechanical devices.The features of synthesizing dense thick films of polycrystalline diamond with the required parameters are considered.The work justifies the choice of the mask, establishes the modes of experimental formation of a topological pattern using the method of plasma-chemical etching. The results of an experimental study of the obtained pattern confirm its high accuracy (the error does not exceed ± 1.2 μm relative to the elements on the photomask) and the minimum structure etching under the protective mask is ≈1.5 μm.As a result of the research, the possibility of manufacturing a high-precision pressure sensor based on polycrystalline diamond has been revealed; the technological modes of micro-processing of a polycrystalline diamond film by plasma-chemical etching, affecting the reproducibility of the required material properties, are determined.