Formation of nanoscale structures on the surface of gallium arsenide by local anodic oxidation and plasma chemical etching

Abstract

This work is devoted to the analysis of problems of the present methods of surface treatment and the preparation of structures with nanoscale. The urgency of the work is caused by the fact that it uses the method of obtaining structures without the standard operations of optical lithography. The main methods of forming nanoscale structures in the work is the formation of an oxide layer on the surface of a semiconductor by the method of local anodic oxidation performed on a probe microscope. After the formation of oxide structures, plasma chemical etching was carried out in combined chloride plasma using inductively coupled and capacitive plasma discharges. As a result, nanoscale structures with a height of 3.5 to 70 nm and a width of 60 to 180 nm were obtained. Structures with a high aspect ratio were obtained.