Abstract
Makyoh (magic mirror) technology has been applied to the observation of slip lines and wafer warpage of Si wafers. Although Makyoh topography gives a bright field image and is not suitable for observing microflaws of micron-sized width and length, it has been shown that the method is capable of revealing slip lines as sensitively as X-ray topography. This is due to the ability of Makyoh topography to observe the slight waviness associated with microflaws in a defocused background image of macroflaws. This contradictory micro/macro observation capability was found to be due to different focal lengths of micro- and macroflaws (when the former is sharp, the latter is vague, and vice versa) and to the formation of composite images with neighbouring bright and dark areas which emphasise the image features vividly and impressively. Makyoh topography has also proven to be the most effective method to determine the optimum conditions for growing epitaxial wafers without slip lines and to check even a very slight drift from the optimum.
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