Abstract
In the present work X-Ray topography (XRT) and Transmission Cathodoluminescence (TCL) observations were performed for investigating crystal defects in GaAs single crystals grown by the Liquid Encapsulated Czochralski (LEC) method; n-type Si, S and Te-doped, p-type Zn-doped, semi-insulating Cr-doped and undoped crystals were tested at 300 K. Single dislocations, dislocation arrangements, such as slip lines, cellular structures and precipitates have been imaged by using both techniques under various experimental conditions. XRT pictures were taken using scanning transmission and reflection geometry, which make use of different diffraction vectors; on the other hand TCL experiments were performed at different accelerating voltages. Consequently it was possible to compare the XRT and TCL images using similar penetration depths and geometrical resolution. Efforts were made to interpret the results obtained by evaluating the different mechanisms responsible for the defective contrast of the two techniques. The complementary characteristics of the XRT and TCL, which allow for a satisfactory characterization of the defective state of GaAs single crystals, were evidenced.
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