Abstract
Radio‐frequency magnetron sputtering has been used to deposit Ni‐rich nickel oxide nano‐films to form a metal‐insulator‐metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low‐resistance state (LRS) and a high‐resistance state (HRS) was observed to be >103, showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 104 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.
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