Abstract
We have studied the electronic properties of delta-doped In0.22Ga0.78As∕GaAs quantum wells (QWs) by van der Pauw Hall measurements and Shubnikov–de Haas measurements. From the temperature-dependent van der Pauw Hall measurements, we observed two kinds of donors, which have binding energies of 104±7 and 9.6±0.1meV. After inserting In0.1Ga0.9As layers between the In0.22Ga0.78As and GaAs layers, a single donor with binding energy of 50±2meV was observed. The carrier concentration determined by SdH measurements did not change after the QWs were illuminated at low temperature, which indicates that these deep donors could not produce a persistent photoconductivity in delta-doped In0.22Ga0.78As∕GaAs QWs.
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