Abstract
Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex=1.5×1011 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures (i.e. T < 60K), the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.KeywordsProbe PulseInterface RoughnessExciton DensityAcoustic Phonon ScatteringSimple Diffusion ModelThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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