Abstract
Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex ≂1.5×1011 cm−2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures, i.e., T ≤60 K, the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.
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