Abstract
Magnetotransport measurements are made on p-type type III and type I Hg1−xCdxTe –CdTe superlattices and type III HgTe–Hg1−xCdxTe heterojunctions at high magnetic fields and low temperatures. Quantized Hall effects are observed in type III structures. The resistivity has strong magnetic field dependence in type I superlattices. In the HgTe–Hg1−xCdxTe heterojunctions the i=1 quantized Hall plateau is unusually wide. This can be explained by a magnetic field dependence of the hole concentration.
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