Abstract
A 2D electron gas (2DEG) with a controlled density of repulsive scatters at the interface is obtained by irradiation of AlGaAs/GaAs heterojunctions with 1 MeV electrons. Measurements of the magnetotransport yield that the plateaus in the Hall resistance are at their quantized values R xy = h/ e 2 v ( v is the integer filling factor) but show a significant broadening. The lineposition h ̷ ω c of the cyclotron resonance is found to be shifted to higher energies such that ( h ̷ ω rmc) 2 = ( h ̷ ω rmc 0) 2 + ( h ̷ ω) 2 with h ̷ ω c 0 the energy before irradiation and h ̷ ω≊30 cm − . From the investigation on partially up to fully annealed samples we found that ( h ̷ ω) 2 is proportional to n sc the density of scatters of the SDEG.
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