Abstract
In this work, we investigate the magnetopolaron effects on the transition energies between the intradonor levels 1 s–2 p ± placed in InP bulk semiconductor. In spite of the InP Frölich electron–longitudinal optical phonon coupling constant ( α=0.12) be greater than the GaAs ( α=0.07), we employ in the calculation the same theoretical tools successfully applied for GaAs structures, a mix between variational method and perturbation theory. A good agreement between our theoretical results and the available experimental results were observed mainly in the region below the resonance, for magnetic field B⩽25 T.
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