Abstract
Abstract We present magneto-optical studies of both InAs monolayers and InAlAs self-assembled quantum dots grown by molecular beam epitaxy. In both structures, strong exciton binding energy was measured. In the case of InAs monolayers in (3 1 1) GaAs matrices, the strong exciton binding energy (12 ± 1 MeV) is caused by the lateral quantum confinement. In the case of InAlAs self-assembled quantum dots, 3D complete quantum confinement is achieved. The excitonic properties of self-assembled quantum dots are discussed.
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