Magnetization reversal mechanisms in Fe/NiO bilayers grown onto nanoporous alumina membranes and Si wafers

Enrique Navarro,Unai Urdiroz,Alejandro Gutierrez,F Javier Palomares,María Alonso,Federico Cebollada,Guillermo Domíguez-Cañizares,Leonardo Soriano,Jesús M González,Ana Ruiz,Marta Sánchez-Agudo

doi:10.1063/1.5130172

Abstract

We report on the magnetization reversal measured in two ferromagnetic/antiferromagnetic (F/AF) bilayer series: Fe/NiO/Al2O3 (nanoporous membranes, series N) and Fe/NiO/Si (wafers, series W). The Fe and NiO layers were deposited by pulsed laser ablation and magnetron sputtering, respectively. In both series different oxygen partial pressures were implemented in the Ar plasma during the NiO growth. The morphologies of both series (as imaged by atomic force microscopy) reflect those of their substrates and, particularly, the series N samples exhibit a six-fold columnar growth around each one of the membranes nanopores. The in-plane hysteresis loops measured upon field cooling the samples down to different temperatures in the range from 50 K up to 290 K evidenced i) 50 K, 0% oxygen coercivities that decreased markedly in both series samples with the increase of the Fe layer thickness (particularly the Fe 5 nm, series N sample exhibited a coercivity larger than the Fe magneto-crystalline anisotropy field), ii) a decrease of the coercivity with the increase of the NiO deposition oxygen partial pressure, observed in both series independently of the Fe layer thickness, iii) low temperature coercivities larger in the series N samples than in the series W ones. Our data are analyzed in correlation to the deposits morphology and in terms of the occurrence of either propagation mediated reversal (collective mode linked to spatially averaged interactions at the F/AF interface) or localized switching (defect ruled mechanism taking place in a spatially confined environment). It is concluded that i) the magnetization reversal mechanism active in series W samples corresponds to a weak pinning regime propagation of walls interacting with uncompensated moments at the F/AF interface, ii) in series N samples, the magnetization reversal does not involve propagation, and iii) in the latter series the reversal events are spatially restricted to the dot-like tops of the NiO columns surrounding the membrane pores.

Highlights

Two main approaches have been considered for the coercivity enhancement in Fe-based thin films
We report on the magnetization reversal measured in two ferromagnetic/antiferromagnetic (F/AF) bilayer series: Fe/NiO/Al2O3 and Fe/NiO/Si
It is concluded that i) the magnetization reversal mechanism active in series W samples corresponds to a weak pinning regime propagation of walls interacting with uncompensated moments at the F/AF interface, ii) in series N samples, the magnetization reversal does not involve propagation, and iii) in the latter series the reversal events are spatially restricted to the dot-like tops of the NiO columns surrounding the membrane pores

Summary

Introduction

Two main approaches have been considered for the coercivity enhancement in Fe-based thin films. The temperature dependence of the hysteretic properties was measured in the range from 290 K down to 50 K by means of a vibrating sample magnetometer and under fields of up to 10 kOe. The presence of oxygen in the Ar sputtering plasma, resulted, in the series W samples, on the progressive decrease of the average NiO grain size, diminishing for 18 nm down to 4 nm when the oxygen partial pressure increased from 0% up to 70% (see a previous work of some of the authors9).

Results

Conclusion