Magnetic two-dimensional van der Waals materials for spintronic devices* *Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0206200), the National Natural Science Foundation of China (Grant No. 11874409), the Beijing Natural Science Foundation, China (Grant No. Z190009), the Science Center of the National Science Foundation of China (Grant No. 52088101), and the K. C.

Abstract

Magnetic two-dimensional (2D) van der Waals (vdWs) materials and their heterostructures attract increasing attentionin the spintronics community due to their various degrees of freedom such as spin, charge, and energy valley, which maystimulate potential applications in the field of low-power and high-speed spintronic devices in the future. This reviewbegins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and stress. Next, the proximity-effect, current-induced magnetization switching, and the related spintronic devices (such as magnetic tunnel junctions and spin valves) based on magnetic 2D vdWs materials are presented. Finally, the development trend of magnetic 2D vdWs materials is discussed. This review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.