Abstract
The observance of negative magnetoresistance at low temperatures in heavily doped n-type germanium, exhibiting metallic conductivity, was first reported by Sasaki et al. 1 at the 1960 Prague Semiconductor Conference. Since that time, numerous authors have reported similar behavior in other types of degenerate semiconductors. Toyozawa,2 in 1962, suggested that there was a strong similarity between the behavior of the magnetoresistance of a heavily doped semiconductor at low temperatures and that of dilute paramagnetic metal alloys. It is experimentally known that in order to induce a negative magnetoresistance in these alloys, a localized magnetic moment must be present. Toyozawa suggested that the presence of localized moments in semiconductors could arise from the statistical nature of the distribution of impurity atoms, resulting in localized electron states in the continuum of conduction electron states in the impurity band, the lifetime of electrons in these quasi-localized states being sufficiently long to scatter magnetically the more mobile electrons associated with the impurity band.
Published Version
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