Abstract
High resistivity and high oxygen concentration of silicon wafers can be beneficial for the radiation hardness of silicon detectors. Wafers of Magnetic Czochralski silicon (MCz-Si) can be grown with a resistivity of a few k Ω cm and with well-controlled, high oxygen concentration. According to the beam test results presented in this paper, n-type MCz-Si bulk, p-strip readout detectors with can be operated with acceptable signal-to-noise ratio up to the irradiation fluence of 1×10 15 cm −2 1-MeV neutron equivalent. The improved radiation hardness compared to that of traditional p-in-n Float Zone silicon (p-in-n FZ-Si) detectors can be explained by better electric field distribution inside MCz-Si detectors. The difference between the distributions is clearly shown by Transient Current Technique (TCT) measurements, presented in this paper. Thus, strip detectors made on n-type MCz-Si are a feasible option for the outer tracker layers of the potential upgrade of the Large Hadron Collider (LHC), the Super-LHC. This corresponds approximately 95% of the total area of silicon detectors in the Super-LHC.
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