Abstract
Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225 GeV muon beam. The TCT measurements indicate a double junction structure and space charge sign inversion in MCz-Si detectors after 6 × 10 14 1 MeV n eq / cm 2 fluence. In the beam test a signal-to-noise ( S/ N) ratio of 50 was measured for a non-irradiated MCz-Si sensor, and a S/ N ratio of 20 for the sensors irradiated to the fluences of 1 × 10 14 1 and 5 × 10 14 1 MeV n eq / cm 2 .
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