Abstract
For the high-luminosity phase of LHC (Large Hadron Collider) at CERN a campaign was started in the CMS (Compact Muon Solenoid) experiment to investigate different radiation hard silicon detectors. Therefore 6in. silicon wafers were ordered to answer various questions regarding for example the radiation tolerance and the annealing behavior of different sensor material. The testing variety includes sensor versions n-in-p and p-in-n in thicknesses from 50μm to 300μm. In terms of sensor material the difference between floating zone, magnetic Czochralski and epitaxial grown silicon is investigated. For the n-in-p sensors, the different isolation technologies, p-stop and p-spray, are tested. The design of the wafer contains test structures, diodes, mini-sensors, long and very short strip sensors, real pixel sensors and double metal routing variants. The irradiation is done with mixed fluences of protons and neutrons which represent the rates of integrated hadrons that are expected in the CMS tracker after the LHC upgrade. This paper presents an overview of results from measurements of non-irradiated test structures with different technologies and also the results after irradiation.
Highlights
In terms of sensor material the difference between floating zone, magnetic Czochralski and epitaxial grown silicon is investigated
The irradiation is done with mixed fluences of protons and neutrons which represent the rates of integrated hadrons that are expected in the CMS tracker after the LHC upgrade
This paper presents an overview of results from measurements of non-irradiated test structures with different technologies and the results after irradiation
Summary
There are standard baby sensors, which serve as a reference, diodes for material investigation and test structures for the determination of the process quality. One possible solution to cope with the higher track density would be the use of so called strixels, where the words strip and pixel are combined. These strixel sensors contain segmented strips with a larger area compared to the standard strip structures. 41 capacitance and dielectric break down voltage are determined with the CAP structure where the strips are isolated. 68 with a 280 nm thick S iO2 and a 50 nm thick S i3N4 layer
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