Abstract
In this study, we investigate gas sensing performance of horizontal floating-gate field-effect transistor (HFGFET) gas sensors having different FET channel width and length, and the number and length of FG fingers using both technology computer-aided design (TCAD) device simulation and actual gas sensing measurement. The HFGFET gas sensors have a control-gate (CG) and a FG, which are horizontally interdigitated. An indium oxide (In2O3) film is locally deposited between the CG and FG to be used as a sensing layer. Utilizing a simplified equivalent circuit and electrical characteristics of the HFGFET gas sensors, we define a new parameter G, which represents a magnitude of gas sensitivity. The effect of channel width and length, and the number and length of FG fingers of the HFGFET gas sensors on gas sensitivity is first investigated by TCAD device simulation, and then verified by NO2 and H2S gas sensing measurement.
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