Abstract
Mn-doped ZnGa2O4−xSex (x=0.00, 0.025, 0.05, 0.075 and 0.10) thin film phosphors have been grown using pulsed laser ablation under various growth conditions. Structural characterization was carried out on a series of ZnGa2O4−xSex:Mn2+ films grown on MgO(100) substrates using Zn-rich ceramic targets. Zn-rich ceramic targets were prepared to compensate for loss of vaporization of Zn during deposition. The oxygen pressure was fixed at 100 mTorr and the substrate temperatures were varied from 500 to 700 °C. Luminescence results indicated that MgO (100) is a promising substrate for the growth of high-quality of ZnGa2O4−xSex:Mn2+ films. The crystallinity and surface roughness of the ZnGa2O4−xSex:Mn2+ films are highly dependent on the growth conditions, in particular on the substrate temperature and composition ratio of targets. The crystallinity of the films improved with Se doping. Incorporation of Se into the ZnGa2O4 lattice led to a remarkable increase of photoluminescence. The highest green emission intensity was observed with ZnGa2O3.925Se0.075:Mn2+ films whose brightness was increased by a factor of 3.1 in comparison with that of ZnGa2O4:Mn2+ films. This phosphor is promising for application in flat panel displays.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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