Abstract
We have studied photoluminescence (PL) properties of GaAs nanocrystals in SiO 2 matrices formed by sequential ion implantation and thermal annealing. After thermal annealing at 900–1000°C, broad PL due to GaAs nanocrystals appears in the red spectral region. The spectral shape of the red PL band depends on the hydrogen concentration in the sample. The hydrogen effect on GaAs nanocrystal luminescence will be discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
