Abstract
We have fabricated GaAs nanocrystals in SiO2 matrices by sequential ion implantation and thermal annealing and studied their photoluminescence (PL) properties. After thermal annealing, GaAs nanocrystals are formed in SiO2 films and some PL bands appear in the red and infrared spectral region. After low-energy deuterium implantation, defect- and impurity-related PL bands disappear and the band-edge emission of GaAs nanocrystals is clearly observed. The luminescence mechanism of GaAs/SiO2 nanocomposites will be discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica. E, Low-dimensional systems & nanostructures
Paper Title
Journal
Date
