Abstract
We report on parametric studies of CNx films deposited by excimer laser ablation of graphite targets in molecular nitrogen atmosphere as a function of gas pressure and laser fluence values. Substrates were Si single crystals at room temperature. Deposition rates decrease with increasing nitrogen pressure. The N/C atomic ratio generally increases with increasing nitrogen pressure and laser fluence, N atoms are mainly bonded to C atoms in the sp2 and sp3 bonding states. At relatively high pressure and laser fluences about 40 percent of the C atoms and about 50 percent of the N atoms are bounded in the C-N single bonds, generally attributed to the (beta) -C3N4 compound.© (2000) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Published Version
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