Abstract
We deposited CNx films on 〈111〉 Si substrates at room temperature by XeCl laser ablation of graphite targets in low pressure N2 atmosphere at laser fluences in the range of 3 to 16 J/cm2. Different diagnostic techniques (SEM, TEM, RBS, XPS, XRD) were used to characterize the deposited films. Films are plane and adhesive to their substrates. The deposition rates depend on laser fluence, ambient pressure and target to substrate distance. The nitrogen concentration increases with increasing ambient pressure and laser fluence. N/C atomic ratios up to 0.7 were inferred from RBS measurements in films deposited at a fluence of 16 J/cm2. XRD and TEM analyses point to an oriented microcrystalline structure of the films deposited at relatively high laser fluences (12 to 16 J/cm2). This could be due to the high kinetic energy of the radicals in the laser produced plasma plume.
Published Version
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