Abstract
Two-terminal diode-like porous silicon structures have been investigated under the impact of strong electric field. Strong electric field I-V current-voltage characteristics have been measured in pulse regime by applying electric pulses of 15 ns duration, at repetition rate of (100-150) Hz, creating average electric field in the structure up to (10<sup>3</sup>-10<sup>4</sup>) V/cm. Modification of structured state of the structures have been revealed at strong electric field influence, resulting in change and stabilizing of their series resistance.
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