Abstract
This work discusses the features of a low temperature polysilicon thin film transistor (TFT) technology suitable for application in the new Active Matrix Organic Light Emitting Diode (AMOLED) displays. The most important facet of this work is the preparation of polysilicon films by the method of solid phase crystallization of amorphous silicon films using rapid thermal processing (RTP). It is shown that amorphous silicon films can be crystallized by RTP at temperatures compatible with glass substrates yielding polysilicon TFT performance suitable for AMOLED. The use of transition metals for achieving aluminum lines with no hillock and low contact resistance to indium tin oxide, two important features for AMOLED displays is discussed.
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