Abstract
The procedures for the liquid phase epitaxial (LPE) growth of high efficiency p-Ga1-xAlxAs,p-GaAs solar cells have been developed. The methods are based on forming the structure by a one step process in which the Zn diffused p-n junction in the n-type GaAs substrate forms in conjunction with the LPE growth of the Zn doped p-Ga1-xAlxAs layer. for structures with 1−10 μm thick Ga1-xAlxAs layers, an isothermal soak of the GaAs substrate in a saturated Ga-Al-As: Zn melt followed by ramp cooling procedures good cells. For structures with < 1 μm thick Ga1-xAlxAs layers, it is mecessary to isothermally soak t he GaAs substrate in an undersaturated melt and ramp cooling is not required.
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