Abstract
We have performed Gax In1−xP liquid phase epitaxial (LPE) growth on (100) GaAs substrates at a growth temperature of 785 °C. The P atom fraction in the growth melts was kept constant every LPE growth run. The lattice mismatch Δa⊥/a0 between the Gax In1−xP layer and GaAs substrate normal to the wafer surface and photoluminescence (PL) of the alloy layer were measured. It was found that Δa⊥/a0 and the PL peak energy vary linearly from +0.47 to −0.13% and from 1.869 to 1.921 eV at room temperature, depending on the Ga atom fraction in the growth melts, respectively. This means that the so-called composition pulling phenomenon does not occur in LPE growth of Gax In1−xP on (100) GaAs substrates.
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