Abstract
A series of GaAs1−xSbx epilayers have been successfully grown on GaAs (100) substrates by liquid phase epitaxy (LPE) technique at about 550°C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1−xSbx epilayers were performed by photoluminescence (PL) and transmission spectra.
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